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BEX-8508C Hall Effect Apparatus
  • Details


Summary

At present, standard industrial chips are basically used as the core Hall elements of Hall Effect Apparatus in university laboratories and markets, and most of them are N-Type semiconductor devices with relatively high carrier mobility. Although this kind of packaged Hall element is a better choice in industrial field, it has brought more limitations in teaching. The closed internal structure of the component is not conducive to students to analyze and study some characteristics of the semiconductor Hall effect itself.


BEX-8508C is a new Hall Effect Apparatus jointly developed with the Physics Experiment Center of Southeast University, and won the first prize of the 12th National Higher Education Physics Experimental Instrument. The instrument adopts open, modular and digital design, and a set of N-type and P-type Hall Chips, switch, switching circuit board and wiring harness included in the system all adopt open design, which is convenient for observing signal links and replacing samples to be tested; the power supply components, switch components, electromagnetic coil components and Hall Chips components in the system are all designed modularly, which is convenient for assembly and combined use; the excitation current, working voltage, and current digital interfaces reserved on the power box is convenient for connecting digital collection instruments and processing software to realize efficient measurement and analysis.


Feature

  • Provide P-Type and N-Type silicon-based semiconductor Hall Chips

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  • Double-throw switch can switch the P-type and N-type Hall plates to be tested instantly

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  • Fully transparent wiring, open Hall Chip and knife switch components   

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  • A magnetic gap of less than 5mm provides a uniform magnetic field of more than 500 mT

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  • Open, modular and digital design


Experiment

  • Study the relationship between Hall Voltage and Working Current in Hall chips

  • Study the relationship between Hall Voltage and Magnetic Induction Intensity (Electromagnetic Excitation Current)

  • Study the influence of unequal potential difference of Hall Chip on Hall Voltage and its elimination method

  • Judge the carrier type of semiconductor materials

  • Study the Hall coefficient, carrier concentration, conductivity, and mobility of P-Type and N-Type semiconductor materials


Experimental Data

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N-Type Hall Chip


P型霍尔片1.pngP型霍尔片2.png

P-Type Hall Chip


霍尔片电导率的测量.png

Measurement of Hall Chip Conductivity

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